国家/地区 日本（2） 美国（2）
IPC部 C（3）
IPC大类 H01（3） C01（2）
IPC小类 C01B（2）
IPC C01B031/00（2）
发明人
公开年
申请年 2005（3）
专利权人

Organic semiconductor material for organic semiconductor layer of semiconductor device, comprises graphene derivative having substituent(s) with fluorine atom.

MORI T, TAKEUCHI H, KIKUZAWA Y

Producing electrical connection structure for nanometer-scale device, comprises contacting carbon of graphene sheet of electrode with biopolymer by electrostatic attraction forces and applying voltage between electrode and biopolymer.

WATANABE H, MANABE C, SHIGEMATSU T, SHIMOTANI K, SHIMIZU M

Nano carbon composite structure used as electrode material for electrochemical capacitor, consists of nano particles of ruthenium oxide highly dispersed in graphene layer of inner portion of hollow nano carbon.

NAOI K, NAOI K T